10
RF Device Data
Freescale Semiconductor
MRFE6S9046NR1 MRFE6S9046GNR1
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
29
P3dB = 48.22
dBm (66
W)
Pin, INPUT POWER (dBm)
VDD
= 28 Vdc, I
DQ
= 300
mA, Pulsed CW
10 μsec(on), 10% Duty Cycle, f = 920 MHz
48
46
44
30 3231 33
Actual
Ideal
P1dB = 47.57
dBm (57
W)
49
47
43
P
out
, OUTPUT POWER (dBm)
NOTE:
Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
45
50
51
52
53
28
27
26
23
25
24
Test Impedances per Compression Level
Zsource
Ω
Zload
Ω
P1dB
7.83 - j2.01
1.25 - j0.52
Figure 18. Pulsed CW Output Power
versus Input Power @ 28 V @ 920
MHz
29
P3dB = 47.89
dBm (62
W)
Pin, INPUT POWER (dBm)
VDD
= 28 Vdc, I
DQ
= 300
mA, Pulsed CW
10 μsec(on), 10% Duty Cycle, f = 960
MHz
47
45
43
30 3231 33
Actual
Ideal
P1dB = 47.25
dBm (53
W)
48
46
42
P
out
, OUTPUT POWER (dBm)
NOTE:
Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
44
49
50
51
52
28
27
26
23
25
24
Test Impedances per Compression Level
Zsource
Ω
Zload
Ω
P1dB
3.79 - j6.51
4.30 - j2.52
Figure 19. Pulsed CW Output Power
versus Input Power @ 28 V @ 960
MHz